Method of forming patterned metalization on patterned semiconductor wafers

摘要

A metalization process forms metal contacts having defined profiles for contact between microelectromechanical (MEMS) devices or chemical sensors with semiconductor devices. Gold contacts may be used for connecting the MEMS devices or chemical sensors to integrated CMOS devices. Gold contacts are deposited over a photoresist via having sidewalls for forming upwardly extending flanges. The metal contacts to the underlying semiconductor device, are formed using a polymethylmethacrylate (PMMA) etch back process for exposing and dissolving the gold metalization layer save the metal contact under a surviving portion of the etched back PMMA layer in a dimple of the gold layer over the photoresist via. The photoresist layer serves to form deep well gold contacts having upwardly extending flanges for connection to the MEMS devices or chemical sensors and to the integrated semiconductor devices.