发明名称 |
Fabrication of semiconductor materials and devices with controlled electrical conductivity |
摘要 |
A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer blocks the diffusion of hydrogen into the material. The reactor can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor with little or no passivation of the dopant species. The barrier layer can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material.
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申请公布号 |
US2002173165(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20020133530 |
申请日期 |
2002.04.11 |
申请人 |
CREE LIGHTING COMPANY |
发明人 |
KAPOLNEK DAVID;THIBEAULT BRIAN |
分类号 |
H01L21/205;H01L21/322;H01L33/32;H01L33/44;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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