发明名称 |
SEMICONDUCTOR DEVICE INTERCONNECT |
摘要 |
A method of fabricating an interconnect for a semiconductor device is disclosed. The method comprises: forming a dielectric layer on a semiconductor substrate; forming a trench in the dielectric layer; placing the semiconductor substrate in a plasma deposition chamber having a tantalum target; initiating a plasma in the presence of nitrogen in the plasma deposition chamber; and depositing an ultra-thin layer comprising tantalum and nitrogen in the trench. |
申请公布号 |
WO02093648(A2) |
申请公布日期 |
2002.11.21 |
申请号 |
WO2002GB01858 |
申请日期 |
2002.04.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED |
发明人 |
COONEY, EDWARD, III;STAMPER, ANTHONY |
分类号 |
C23C14/06;C23C14/34;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;H01L23/532 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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