Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same

摘要

In a method of manufacturing a semiconductor memory device, a lower electrode film is formed on a semiconductor substrate via an interlayer insulating film. A ferroelectric film is formed on the lower electrode layer while heating the lower electrode layer uniformly in the cell array region. An upper electrode film is formed on the ferroelectric film. Ferroelectric capacitors are formed in a memory cell array region. Each of the ferroelectric capacitors includes the lower electrode film, the ferroelectric film and the upper electrode film.