发明名称 |
Forming devices on a semiconductor substrate |
摘要 |
A method for forming a plurality of devices on a substrate is disclosed. The method includes providing an oxide layer over the substrate, forming diffused regions in the plurality of devices, and performing at least one high-energy implant in the diffused regions. The diffused regions are buried and driven. Oxide layer is then removed. The method also includes depositing an epitaxial layer over the diffused regions, such that the diffused regions are buried under the epitaxial layer, in a single row.
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申请公布号 |
US2002173092(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20010860932 |
申请日期 |
2001.05.18 |
申请人 |
YAMAGUCHI TADANORI;LIAO KEN;YANG FANLING;SCHEER ROBERT F. |
发明人 |
YAMAGUCHI TADANORI;LIAO KEN;YANG FANLING;SCHEER ROBERT F. |
分类号 |
H01L21/8222;H01L27/06;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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