发明名称 |
Method and apparatus to quickly increase the concentration of gas in a process chamber to a very high level |
摘要 |
An in-process microelectronic device may be treated by providing a process chamber with an in-process microelectronic device therein, providing an ozone generator and an ozone storage reservoir, the ozone storage reservoir in fluid communication with the ozone generator and the process chamber, generating ozone with the ozone generator for a first period of time and delivering the ozone to the ozone storage reservoir; and subsequently providing ozone from the ozone storage reservoir and the generator to the process chamber during a second period of time different from the first period of time and exposing the in-process microelectronic device thereto.
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申请公布号 |
US2002173166(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20010681463 |
申请日期 |
2001.04.11 |
申请人 |
CHRISTENSON KURT;NELSON STEVEN L. |
发明人 |
CHRISTENSON KURT;NELSON STEVEN L. |
分类号 |
C01B13/10;H01L21/311;H01L21/316;(IPC1-7):H01L21/31;H01L21/26;H01L21/324;H01L21/42;H01L21/469 |
主分类号 |
C01B13/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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