发明名称 Method and apparatus to quickly increase the concentration of gas in a process chamber to a very high level
摘要 An in-process microelectronic device may be treated by providing a process chamber with an in-process microelectronic device therein, providing an ozone generator and an ozone storage reservoir, the ozone storage reservoir in fluid communication with the ozone generator and the process chamber, generating ozone with the ozone generator for a first period of time and delivering the ozone to the ozone storage reservoir; and subsequently providing ozone from the ozone storage reservoir and the generator to the process chamber during a second period of time different from the first period of time and exposing the in-process microelectronic device thereto.
申请公布号 US2002173166(A1) 申请公布日期 2002.11.21
申请号 US20010681463 申请日期 2001.04.11
申请人 CHRISTENSON KURT;NELSON STEVEN L. 发明人 CHRISTENSON KURT;NELSON STEVEN L.
分类号 C01B13/10;H01L21/311;H01L21/316;(IPC1-7):H01L21/31;H01L21/26;H01L21/324;H01L21/42;H01L21/469 主分类号 C01B13/10
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