Wiring layer dry etching method, semiconductor device manufacturing method, and semiconductor device obtained according to the method

摘要

A wiring layer dry etching method is improved not to reduce electrical characteristics of a semiconductor device. A semiconductor substrate on which a mask for patterning a wiring layer is formed is prepared, in which mask is formed on wiring layer (a first step). Affected layers on a surface of the wiring layer are dry-etched and removed (second step). Wiring layer is dry-etched by using mask (third step). When shifting is performed from the second step to the third step, vacuuming is not performed, and continuous discharge is performed.