发明名称 |
Patterned SOI by oxygen implantation and annealing |
摘要 |
Methods for forming a patterned SOI region in a Si-containing substrate is provided which has geometries of about 0.25 mum or less. Specifically, one method includes the steps of: forming a patterned dielectric mask on a surface of a Si-containing substrate, wherein the patterned dielectric mask includes vertical edges that define boundaries for at least one opening which exposes a portion of the Si-containing substrate; implanting oxygen ions through the at least one opening removing the mask and forming a Si layer on at least the exposed surfaces of the Si-containing substrate; and annealing at a temperature of about 1250° C. or above and in an oxidizing ambient so as to form at least one discrete buried oxide region in the Si-containing substrate. In one embodiment, the mask is not removed until after the annealing step; and in another embodiment, the Si-containing layer is formed after annealing and mask removal.
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申请公布号 |
US2002173114(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20010861590 |
申请日期 |
2001.05.21 |
申请人 |
FOGEL KEITH E.;HAKEY MARK C.;HOLMES STEVEN J.;SADANA DEVENDRA K.;SHAHIDI GHAVAM G. |
发明人 |
FOGEL KEITH E.;HAKEY MARK C.;HOLMES STEVEN J.;SADANA DEVENDRA K.;SHAHIDI GHAVAM G. |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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