| 摘要 |
<p>One form of the present invention is a method for mask-less selective deposition made up of the steps of contacting a first portion of a substrate with a chemical agent that binds to the substrate to affect the susceptibility of the portion of the substrate to deposition. Following the treatment with the chemical agent, a first layer of a first material is deposited on a second portion of the surface. The first and second portions of the substrate may in fact be the same portion. That is to say, that the chemical agent may enhance or inhibit the deposition of the material of a portion of the substrate.</p> |
