发明名称 |
PROCESS FOR WAFER LEVEL TREATMENT TO REDUCE STICTION AND PASSIVATE MICROMACHINED SURFACES AND COMPOUNDS USED THEREFOR |
摘要 |
This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials. |
申请公布号 |
EP1258035(A1) |
申请公布日期 |
2002.11.20 |
申请号 |
EP20010905118 |
申请日期 |
2001.01.29 |
申请人 |
ANALOG DEVICES, INCORPORATED |
发明人 |
MARTIN, JOHN, R. |
分类号 |
H01L21/31;H01L21/316;B81B3/00;B81C1/00;H01L21/00;H01L21/312;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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