| 发明名称 |
Memory architecture with refresh and sense amplifiers |
| 摘要 |
<p>An improved memory architecture is described. The memory architecture includes separately controlled refresh and sense amplifiers to enable a memory access and refresh cycle simultaneously. <IMAGE></p> |
| 申请公布号 |
EP1258887(A2) |
申请公布日期 |
2002.11.20 |
| 申请号 |
EP20020010358 |
申请日期 |
2002.05.07 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
JAIN, RAJ KUMAR |
| 分类号 |
G11C11/405;G11C11/406;G11C11/4091;H01L21/8242;H01L27/108;H01L27/11;(IPC1-7):G11C8/16 |
主分类号 |
G11C11/405 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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