| 摘要 |
PURPOSE: A reference wafer for calibration and method for calibrating an apparatus for thickness measurement using it are provided to reduce a time and a process for measuring each layer and total thickness of a semiconductor device including a plurality of thin film layers. CONSTITUTION: An aluminium layer(104) is formed on an upper surface of a silicon substrate(102). A titanium nitride layer(106) is formed on an upper surface of the aluminium layer(104). An oxide layer(108) is formed on an upper surface of the titanium nitride layer(106). A protective layer(110) is formed on an upper surface of the oxide layer(108). The aluminium layer(104), the titanium nitride layer(106), the oxide layer(108), and the protective layer(110) have different optical refractive indexes. The optical refractive indexes can be set up by controlling physical constants of the aluminium layer(104), the titanium nitride layer(106), the oxide layer(108), and the protective layer(110).
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