发明名称 |
METHOD OF ION DOPING OF SOLID BODIES |
摘要 |
FIELD: doping of solid bodies by radiation treatment of phase-forming elements with ions; ion modification of structure and physico-mechanical properties of metals, semiconductors and superconductors. SUBSTANCE: method consists in simultaneous or successive radiation treatment of objects with ions of inert gas and ions of phase-forming elements; radiation treatment with inert gas ions leads to forming gas nanopores at simultaneous or successive filling of these pores with ions of phase- forming elements. EFFECT: enhanced efficiency; forming and synthesizing mono-dispersed nanoemissions of various phases at high volume density. 4 dwg
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申请公布号 |
RU2193080(C2) |
申请公布日期 |
2002.11.20 |
申请号 |
RU20000108605 |
申请日期 |
2000.04.05 |
申请人 |
OB"EDINENNYJ INSTITUT JADERNYKH ISSLEDOVANIJ |
发明人 |
REUTOV V.F.;DMITRIEV S.N. |
分类号 |
C30B31/22;H01L21/265;(IPC1-7):C30B31/22 |
主分类号 |
C30B31/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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