发明名称 |
Multi-state non-volatile semiconductor memory device |
摘要 |
A non-volatile semiconductor memory device including a memory cell array having a plurality of memory cells coupled to a plurality of bitlines and wordlines, each memory cell being programmed to one of plurality of data storage states. A node is connected to a selected bitline responsive to a storage state in a selected memory cell. A plurality of latched registers is connected to the node to store and output data bits corresponding the storage state, the data bits being assigned to the selected bitline. A circuit is adapted to precharge the selected bitline before sensing the selected memory cell and is adapted to equalize the selected bitline and the node after sensing the selected memory cell.
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申请公布号 |
US6483744(B2) |
申请公布日期 |
2002.11.19 |
申请号 |
US20010887904 |
申请日期 |
2001.06.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM EUN-CHEOL;LEE YEONG-TAEK |
分类号 |
H01L27/115;G11C11/56;G11C16/24;(IPC1-7):G11C16/04 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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