| 摘要 |
A method for fabricating a semiconductor device by one masking process using selective epitaxial growth, comprising the steps of providing a first conductive silicon substrate having an active region and field regions thereon and having a formed pad oxide layer on the surface, forming a trench having a width including the active region and field regions at both sides of the active region by etching the pad oxide layer and silicon substrate, forming a spacer having a width similar to that of the field region at both sidewalls of the trench and exposing active region of the silicon substrate, forming a second conductive well on the exposed active region of the silicon substrate by growing an in-situ doped silicon epi layer to a height similar to a surface of the silicon substrate, depositing an oxide layer on the resultant structure to fill a gap between the spacer and the well and performing planarization of the oxide layer to expose a surface of the silicon substrate and to form isolation layers at both sides of the well.
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