发明名称 |
Method for pretreating dielectric layers to enhance the adhesion of CVD metal layers thereto |
摘要 |
A method for chemical vapor deposition comprises providing a quantity of nitrogen at the interface between a transition metal-based material and an underlying dielectric-covered substrate. The nitrogen can be provided by heating the substrate in an atmosphere of a nitrogen-containing process gas or by exposing the surface of the dielectric-covered substrate to a plasma generated from a nitrogen-containing process gas. In certain embodiments, the nitrogen on the surface of the dielectric is bound with atoms of a transition metal to form a thin layer of a transition metal nitride. The method promotes the adhesion of the transition metal-based layer to the dielectric by nullifying the effect of halogen atoms that are also incorporated at the transition metal/dielectric interface.
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申请公布号 |
US6482477(B1) |
申请公布日期 |
2002.11.19 |
申请号 |
US20000723876 |
申请日期 |
2000.11.28 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
WESTHOFF RICHARD C.;CALIENDO STEVEN P.;HILLMAN JOSEPH T. |
分类号 |
C23C16/02;C23C16/14;H01L21/285;H01L21/3105;H01L21/3205;H01L21/768;(IPC1-7):C23C16/34 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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