| 摘要 |
PURPOSE: A semiconductor laser diode is provided to improve reliability of a laser device by enhancing the temperature characteristics and crystalline characteristics of the semiconductor laser diode. CONSTITUTION: The laser diode is provided on its n-type substrate with an n-type buffer layer, an n-type clad layer, and an undoped active layer, subsequently. Top portion of the active layer is provided with a strained multi-quantum barrier(SMQB) layer(45). On the SMQB layer(45), a p-type clad layer(46), a p-type contact layer, and p+ type cap layer are formed subsequently. A p-type spacer(45a) is formed at the bottom portion of the SMQB layer(45), and a plurality of tensile strained p-(Al0.7Ga0.3)xIn1-xP layers(45b) and a compressive strained p-GaxIn1-xP (x: 0.3-0.47) layers(45c) are alternatively stacked on the spacer(45a).
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