发明名称 Synchronous semiconductor memory device and method for operating same
摘要 Disclosed is a semiconductor memory device comprising a pipeline structure having a sense amplifier responsive to a first enable signal; a data register responsive to a second enable signal for latching an output of said sense amplifier between said sense amplifier and a common data line; and a monitoring part to monitor said first and second enable signals and adapted to prevent overlapping between an enabling interval of said first enable signal and said second enable signal.
申请公布号 US6483770(B2) 申请公布日期 2002.11.19
申请号 US20010849289 申请日期 2001.05.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NOH YONG-HWAN;SOHN KYO-MIN
分类号 G11C7/10;(IPC1-7):G11C8/00 主分类号 G11C7/10
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