发明名称 |
Method of forming resist pattern, method of manufacturing semiconductor device and apparatus for removing organic antireflection coating |
摘要 |
An organic antireflection coating is formed on a semiconductor substrate. A resist film is formed on the semiconductor substrate through the organic antireflection coating. The resist film is patterned for forming a resist pattern having an opening. A part of the organic antireflection coating exposed on the bottom of the opening of the resist pattern is removed with atomic oxygen. Thus provided is a method of forming a resist pattern so improved as to increase the dimensional accuracy of the resist pattern.
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申请公布号 |
US6481119(B1) |
申请公布日期 |
2002.11.19 |
申请号 |
US20000631624 |
申请日期 |
2000.08.04 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ITO JIRO |
分类号 |
G03F7/11;G03F7/40;H01L21/027;H01L21/266;H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):F26B9/00 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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