| 摘要 |
A method and system for manufacturing a silicon wafer is disclosed. The ingot's crystallographic orientation is identified. Then ingot indicia is marked onto the ingot. The ingot indicia includes the manufacturer's data as well as the ingot's specific information. The indicia also identifies the crystallographic orientation of the ingot. A plurality of wafers are sliced from the ingot with a portion of the ingot indicia on each of the wafers. Wafer indicia is then marked onto a peripheral edge of the wafer. The wafer indicia includes a mark to identify the crystallographic orientation of the wafer as well as specific information about the ingot and the wafer. The wafer indicia may include dopant levels as well as resistivity and conductivity levels of the wafer.
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