| 发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF |
| 摘要 |
In order to form a first capacitor having a small capacitance and a second c apacitor having a large capacitance on a substance with a minimum number of manufactu ring steps, at least one of electrodes of the first capacitor and at least one of electr odes of the second capacitor are formed simultaneously.
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| 申请公布号 |
CA2252875(C) |
申请公布日期 |
2002.11.19 |
| 申请号 |
CA19982252875 |
申请日期 |
1998.11.05 |
| 申请人 |
NEC CORPORATION |
发明人 |
IWATA, NAOTAKA;NISHIMURA, TAKESHI B. |
| 分类号 |
H01L27/04;H01L21/822;H01L27/06;(IPC1-7):H01L21/28;H01L27/01;H01L25/07;H01G4/10;H01L21/77 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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