发明名称 |
Laser processing method |
摘要 |
A laser processing apparatus provides a heating chamber, a chamber for laser light irradiation and a robot arm, wherein a temperature of a substrate on which a silicon film to be irradiated with laser light is formed is heated to 450 to 750° C. in the heating chamber followed by irradiating the silicon film with laser light so that a silicon film having a single crystal or a silicon film that can be regarded as the single crystal can be obtained.
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申请公布号 |
US6482687(B2) |
申请公布日期 |
2002.11.19 |
申请号 |
US20010840229 |
申请日期 |
2001.04.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TERAMOTO SATOSHI;OHTANI HISASHI;MIYANAGA AKIHARU;HAMATANI TOSHIJI;YAMAZAKI SHUNPEI |
分类号 |
H01L21/00;H01L21/20;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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