发明名称 |
REFERENCE VOLTAGE GENERATION CIRCUIT |
摘要 |
PURPOSE: A reference voltage generation circuit is provided to generate stably a reference voltage by minimizing a variation of the reference voltage according to a variation of temperature. CONSTITUTION: A voltage bias portion(201) sets up a preliminary reference voltage(VREF_P) by the first to the fifth resistances(R1 to R5) and the first transistor group(M1 to M24). A voltage control portion(203) determined a voltage level of the preliminary reference voltage(VREF_P) by transistors(M31,M32) of the second transistor group connected between the preliminary reference voltage(VREF_P) and a ground power source(VSS). A voltage compensation portion(207) is formed by transistors(M41 to M46) of the second transistor group connected between the preliminary reference voltage(VREF_P) and a reference voltage(VREF). A voltage compensation portion(209) is formed by transistors(M51 to M58) of the third transistor group in order to control a range of the reference voltage(VREF). A capacitor(205) is used for supplying the reference voltage(VREF).
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申请公布号 |
KR20020085992(A) |
申请公布日期 |
2002.11.18 |
申请号 |
KR20010025574 |
申请日期 |
2001.05.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, SEONG JIN |
分类号 |
G05F3/26;G05F1/56;(IPC1-7):G05F3/26 |
主分类号 |
G05F3/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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