发明名称 |
POWER SEMICONDUCTOR DEVICE HAVING CHIP-ON-CHIP STRUCTURE |
摘要 |
<p>PURPOSE: A power semiconductor device having a chip-on-chip structure is provided to miniaturize a size of the power semiconductor device, improve reliability of the power semiconductor device, and lower a production cost of the power semiconductor device by using the chip-on-chip structure. CONSTITUTION: A lead frame(108) is used for fabricating a semiconductor package. A conductive adhesive(106) is applied on an upper face of a chip pad of the lead frame(108). A semiconductor chip(100) for power is adhered on the upper face of the chip pad of the lead frame(108). A passivation layer is not formed on the upper portion of the semiconductor chip(100). An insulating adhesion layer(102A) is covered on a surface of the semiconductor chip(100) for power. An IC(Integrated Circuit) chip(104) for control is adhered on a surface of the insulating adhesion layer(102A).</p> |
申请公布号 |
KR20020085986(A) |
申请公布日期 |
2002.11.18 |
申请号 |
KR20010025566 |
申请日期 |
2001.05.10 |
申请人 |
FAIRCHILD KOREA SEMICONDUCTOR LTD. |
发明人 |
HUH, CHEOL HO;JUN, O SEOP;NAM, SI BAEK |
分类号 |
H01L23/12;(IPC1-7):H01L23/12 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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