| 发明名称 |
Passivation layer on a semiconductor device with a ferroelectric layer |
| 摘要 |
A semiconductor device includes at least a ferroelectric or high-dielectric-constant film and a surface coating that have been stacked in this order over a substrate. The surface coating is made of an acrylic resin. <IMAGE> |
| 申请公布号 |
EP1256979(A1) |
申请公布日期 |
2002.11.13 |
| 申请号 |
EP20010123445 |
申请日期 |
2001.09.28 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
UMEDA, KAZUO;MATSUNAGA, KEIICHI |
| 分类号 |
H01L27/105;H01L21/02;H01L21/8242;H01L21/8246;H01L23/29;H01L23/556;H01L27/108;H01L27/115 |
主分类号 |
H01L27/105 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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