| 摘要 |
<p>The invention relates to a semiconductor component and a method for the production thereof which makes it possible to obtain a switching element for a high-frequency switching without the constantly present leakage inductances leading to spurious interference voltage peaks. To that effect, the surface of the wafer is provided with trenches leading to a central zone (10) which has a laterally variable thickness. Thicker regions (40) of the central zone (10) guarantee a smooth drop in evacuation current, while the thinner regions (50) ensure short switching times and a low forward voltage.</p> |
