Programming method for non-volatile semiconductor memory device comprising twin-memory cells

摘要

A method is provided for programming data for a memory element of a twin memory cell (i). The word line WL1 is set to a programming word line selection voltage, the control gate CGÄi + 1Ü is set to a programming control gate voltage, the control gate CGÄiÜ is set to an over-ride voltage, the bit line BL Äi + 1Ü is set to a programming bit line voltage, and the bit line BLÄiÜ is connected to the constant current source. <IMAGE>