发明名称 |
NEGATIVE VOLTAGE GENERATOR OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A negative voltage generator of a semiconductor memory device is provided, which can supply a stable bias voltage by removing a ripple of a charge pump, and can reduce the amount of charges required to precharge a word line. CONSTITUTION: The negative voltage generator comprises the first charge pump(20) having an output and the second charge pump(50) having an output by being connected to the first charge pump. The second charge pump is controlled by a precharge signal. And the negative voltage generator further comprises a negative voltage controller having an input connected to the output of the first charge pump and an output connected to the output of the second charge pump. The output of the first charge pump is connected directly to the output of the second charge pump. The negative voltage generator further comprises a level detector(30) having an input connected to the output of the first charge pump.
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申请公布号 |
KR20020084892(A) |
申请公布日期 |
2002.11.13 |
申请号 |
KR20020000499 |
申请日期 |
2002.01.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SIM, JAE YUN;YOO, JE HWAN |
分类号 |
G11C11/408;G11C5/14;G11C16/30;H02M3/07;(IPC1-7):G11C5/14 |
主分类号 |
G11C11/408 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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