发明名称 NEGATIVE VOLTAGE GENERATOR OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A negative voltage generator of a semiconductor memory device is provided, which can supply a stable bias voltage by removing a ripple of a charge pump, and can reduce the amount of charges required to precharge a word line. CONSTITUTION: The negative voltage generator comprises the first charge pump(20) having an output and the second charge pump(50) having an output by being connected to the first charge pump. The second charge pump is controlled by a precharge signal. And the negative voltage generator further comprises a negative voltage controller having an input connected to the output of the first charge pump and an output connected to the output of the second charge pump. The output of the first charge pump is connected directly to the output of the second charge pump. The negative voltage generator further comprises a level detector(30) having an input connected to the output of the first charge pump.
申请公布号 KR20020084892(A) 申请公布日期 2002.11.13
申请号 KR20020000499 申请日期 2002.01.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SIM, JAE YUN;YOO, JE HWAN
分类号 G11C11/408;G11C5/14;G11C16/30;H02M3/07;(IPC1-7):G11C5/14 主分类号 G11C11/408
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