| 摘要 |
To provide a method for producing a semiconductor device employing a ceramic capacitor which realizes a low voltage operation. The method for producing a semiconductor device having a dielectric capacitor includes a first step of forming a lower electrode (13), a second step of forming a polycrystalline dielectric thin film (14) having roughness on its surface on the lower electrode, a third step of rapidly heating a surface layer portion of the dielectric thin film of a predetermined film thickness to melting and quenching the portion to planarize the surface of the thin film, and a fourth step of forming an upper electrode (15) on the dielectric thin film. <IMAGE>
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