发明名称 Semiconductor device having an internal power supply circuit
摘要 A plurality of the P-channel transistors of Group A and a plurality of P-channel transistors of Group B are connected between the power-supply-voltage VCC and the ground, and an output signal SUBUP is obtained from the node C via two inverters. Each terminal of. Transistors of Group B is connected to the ground via N-channel first, second and third transistors. The first signals phi1 and phi2 are inputted to the gates of the first and second transistors and the output of the NOR logical circuit is inputted to the gate of the third transistor. Current performance of the P-channel transistors of Group B is adjusted to control the substrate voltage and to make the substrate voltage both higher and lower than that of normal operation by the use of the test modes. So, the substrate voltage can be changed during hold tests in a selection process to accelerate the tests and shorten the selection time.
申请公布号 US6480053(B1) 申请公布日期 2002.11.12
申请号 US20000587474 申请日期 2000.06.05
申请人 NEC CORPORATION 发明人 TERAMOTO KAZUHIRO
分类号 G01R31/28;G01R31/3185;G05F1/10;G05F1/46;G11C11/4074;H01L21/822;H01L27/04;H03K17/693;(IPC1-7):H03K17/735 主分类号 G01R31/28
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