| 摘要 |
A new method is provided for the creation of an aluminum bump on a surface of a semiconductor device. A patterned layer of aluminum overlying a substrate is created, the patterned layer of aluminum is the layer of aluminum over which a contact bump is to be created. A layer of passivation is deposited, a first layer of photoresist is deposited for the creation of an opening in the layer of passivation that partially exposed the surface of the patterned layer of aluminum. This patterned first layer of photoresist remains in place, a layer of aluminum is sputter deposited, a second layer of photoresist is deposited which is patterned and etched for the creation of the aluminum bump overlying the patterned layer of aluminum. The aluminum solder bump is created by etching the deposited layer of aluminum. After the solder bump has been created, the patterned first and the second layers of photoresist are removed in one processing step, leaving in place the solder bump. |
