发明名称 |
Method to improve adhesion of molding compound by providing an oxygen rich film over the top surface of a passivation layer |
摘要 |
A new method is provided for treating the surface of a layer of passivation where this layer of passivation comprises silicon dioxide or silicon nitride. An oxygen rich layer is created over the surface of the layer of passivation. Under the first embodiment of the invention a layer of silicon oxide is deposited over the surface of a substrate, a layer of plasma enhanced silicon nitride is deposited over the surface of the layer of silicon oxide, and a layer of oxynitride is deposited over the surface of the layer of plasma enhanced silicon nitride. Under the second embodiment of the invention a layer of silicon oxide is deposited over the surface of a substrate, a layer of silicon nitride is deposited over the surface of layer of silicon oxide. The surface of the layer of silicon nitride is oxidized by N2O or O2 plasma treatment. |
申请公布号 |
US6479402(B1) |
申请公布日期 |
2002.11.12 |
申请号 |
US20010999482 |
申请日期 |
2001.12.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
YANG CHIE-MING;LIN HUI-CHI;LAI JUN-YANG;LIOU JIANN-LIANG;SHIH CHENG-YEH |
分类号 |
H01L21/314;H01L23/31;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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