发明名称 Providing equal cell programming conditions across a large and high density array of phase-change memory cells
摘要 To provide equal cell programming conditions, the integrated circuit device has a number of bitline compensation elements each coupled in series with a separate bitline, and a number of wordline compensation elements each coupled in series with a separate wordline. The resistances in these compensation elements are such that a variation in a sum of (1) the resistance along the corresponding bitline of a cell between the first terminal of the cell and a far terminal of the bitline compensation element that is coupled to the corresponding bitline and (2) the resistance along the corresponding wordline of the cell between a second terminal of the cell and a far terminal of the wordline compensation element that is coupled to the corresponding wordline, is minimized across the cells of the array.
申请公布号 US6480438(B1) 申请公布日期 2002.11.12
申请号 US20010881439 申请日期 2001.06.12
申请人 OVONYX, INC. 发明人 PARK EUNGJOON
分类号 G11C11/34;G11C16/08;G11C16/24;(IPC1-7):G11C8/00 主分类号 G11C11/34
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