发明名称 |
Single supply HFET with temperature compensation |
摘要 |
A method of fabricating apparatus, and the apparatus, for providing low voltage temperature compensation in a single power supply HFET including a stack of epitaxially grown compound semiconductor layers with an HFET formed in the stack. A Schottky diode is formed in the stack adjacent the HFET during the formation of the HFET. The HFET and the Schottky diode are formed simultaneously, with a portion of one of the layers of metal forming the gate of the HFET being positioned in contact with a layer of the stack having a low bandgap (e.g. less than 0.8 eV) to provide a turn-on voltage for the Schottky diode of less than 1.8 Volts. The Schottky diode is connected to the gate contact of the HFET by a gate circuit to compensate for changes in current loading in the gate circuit with changes in temperature.
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申请公布号 |
US6479843(B2) |
申请公布日期 |
2002.11.12 |
申请号 |
US20000559791 |
申请日期 |
2000.04.27 |
申请人 |
MOTOROLA, INC. |
发明人 |
HUANG JENN-HWA;GLASS ELIZABETH C.;HARTIN OLIN;VALENTINE WENDY L.;COSTA JULIO |
分类号 |
H01L29/872;H01L21/8232;H01L21/8252;H01L27/02;H01L27/06;H01L27/095;H01L29/47;H03F1/30;H03K17/14;(IPC1-7):H01L21/338 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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