| 摘要 |
A wafer is mounted on a mounting stand 3 that is provided with an electrostatic chuck. Then an SiOF film is formed by creating a plasma of a processing gas and heating the wafer W to approximately 350° C. while the surface of the mounting stand 3 is heated to 200° C. After ten wafers W have been processed, cleaning is performed to remove a film S that has adhered to the interior of the film-formation chamber, and then a pre-coat is formed. A protective plate 5 made of aluminum nitride is placed on the mounting stand 3 during the cleaning and pre-coating steps. The protective plate 5 protects the surface of the electrostatic chuck during the cleaning and prevents the formation of a film on the mounting stand 3 during the pre-coating. In addition, since the protective plate 5 is electrostatically attracted to the mounting stand 3 and it is also strong with respect to thermal shocks, there is no need to lower the temperature of the mounting stand 3 during the cleaning, which improves throughput.
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