发明名称 |
Thin film transistor and liquid crystal display unit |
摘要 |
A bottom-gate type thin-film transistor free from alignment shift of the gate electrode and from damage caused by injection of impurities. The crystal grains of a polycrystalline silicon thin-film are anisotropically grown to form a prescribed angle relative to the gate length direction. The angle between the gate length direction and the longitudinal direction of the grains is adjusted according to use of the liquid crystal display unit. The bottom-gate transistor includes an undercoat insulating layer containing impurities on the substrate. Impurities are diffused from the undercoat layer to the semiconductor layer by laser-annealing the amorphous silicon.
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申请公布号 |
US6479837(B1) |
申请公布日期 |
2002.11.12 |
申请号 |
US20010743169 |
申请日期 |
2001.01.05 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OGAWA KAZUFUMI;ADACHI KAZUYASU |
分类号 |
H01L21/225;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04;H01L31/20;H01L31/036;H01L31/037 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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地址 |
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