| 摘要 |
The invention relates to a vertical power MOSFET having additional column-like zones (11, 12) which are arranged in an inner zone (1) and have the same and the opposite conductivity type as/to the inner zone (1). The charge carrier life is reduced in the additional zones (12), which are of the same conductivity type as the inner zone (1), and the inner zone (1) is dimensioned such that the space charge zone does not reach the junction between the inner zone and a drain zone.
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