发明名称 ESD device with salicide layer isolated by shallow trench isolation for saving one salicide block photomask
摘要 A electrostatic discharge (ESD) device with salicide layers isolated by a shallow trench isolation in order to save one salicide block photomask. A shallow trench isolation is formed in drain region to isolate a portion of the drain region, so that the drain region is partitioned into two parts. A salicide layer is formed on the drain region. Since the salicide layer is not formed on the shallow trench isolation, without using an additional photomask, the salicide layer on the drain region is partitioned into two parts. The effect of the local thermal energy occurring to drain junction upon the contact metal of the drain region is eliminated.
申请公布号 US6479870(B1) 申请公布日期 2002.11.12
申请号 US20000739032 申请日期 2000.11.21
申请人 UNITED MICROELECTRONICS CORP. 发明人 CHEN SHIAO-SHIEN;TANG TIEN-HAO;HUANG-LU SHIANG
分类号 H01L23/60;H01L23/62;H01L27/02;(IPC1-7):H01L23/62 主分类号 H01L23/60
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