| 摘要 |
A process for forming a composite, interlevel dielectric, (ILD), layer, for MOSFET devices, has been developed. The composite ILD layer is comprised with an underlying, undoped silicon glass layer, providing the material needed to fill the narrow spaces between polysilicon gate structures of the MOSFET devices. A P2O5 doped, insulator layer, is next formed on the underlying, undoped silicon glass layer, to provide a mobile ion gettering property. An overlying, undoped silicon glass layer is then deposited and subjected to a chemical mechanical polishing procedure, resulting in the desired planar top surface topography, for the composite ILD layer.
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