Surface semiconductor optical amplifier with transparent substrate

摘要

A surface-type light amplifier device has an active layer (13) of a light amplification section (11) sandwiched between an n-type semiconductor cladding layer (12) that is an n-type semiconductor layer and a p-type semiconductor multilayer reflecting mirror (14). The light amplification section is attached to a transparent substrate (21) on the side of the n-type semiconductor cladding layer. A plurality of divided electrodes (16) form electrical continuity relative to the p-type semiconductor multilayer reflecting mirror via a p-type cap layer (15) provided on the reflecting mirror. An electrode (18) forming electrical continuity relative to the n-type semiconductor cladding layer is connected to a wiring conductor (20) provided on the surface of the transparent substrate. The device enables amplification of a single, uniform, large-diameter light beam and oscillation of a laser.