发明名称 |
Plasma chamber support having dual electrodes |
摘要 |
A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.
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申请公布号 |
US6478924(B1) |
申请公布日期 |
2002.11.12 |
申请号 |
US20000513992 |
申请日期 |
2000.03.07 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SHAMOUILIAN SHAMOUIL;KHOLODENKO ARNOLD;WONG KWOK MANUS;WANG LIANG-GUO;VEYTSER ALEXANDER M.;GRIMARD DENNIS S. |
分类号 |
H01L21/683;(IPC1-7):H05H1/00 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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