| 摘要 |
The present invention discloses a method for fabricating a SOI wafer. The method for fabricating the SOI wafer of the present invention, comprising the steps of: preparing a semiconductor substrate and a base substrate; forming a pad oxide layer, a nitride layer and a mask oxide layer in sequence on one surface of the semiconductor substrate; etching the pad oxide layer, the nitride layer, and the mask oxide layer to expose an isolation region of the semiconductor substrate; forming a trench by etching the exposed semiconductor substrate region; removing the mask oxide layer; forming a field oxide layer having bird's-beak at the edge thereof by oxidizing the low surface of the trench; removing the field oxide layer; forming an isolation layer of trench type to fill the oxide layer into the trench; removing the nitride layer and the pad oxide layer; depositing a first insulating layer on the isolation layer and the semiconductor substrate; depositing a second insulating layer on the base substrate; bonding the semiconductor substrate and the base substrate to form a contact of the first insulating layer with the second insulating layer; polishing the surface of the semiconductor substrate using the isolation layer as a polishing stopper; and further polishing the surface of the semiconductor substrate to expose the bird's beak and to form a semiconductor layer of a desired thickness.
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