发明名称 |
Method of monitoring loss of silicon nitride |
摘要 |
A method of monitoring loss of silicon nitride, used to monitor the loss of a first etch stop layer below a first insulating layer in a first contact opening opening after the first contact opening is formed in the first insulating layer over a device region and scribe line of a wafer. A dummy wafer is provided on which stacks in sequence a second etch stop layer and a second insulating layer. The second insulating layer is patterned by removing a portion of the second insulating layer, so that a monitoring opening that exposes the second etch stop layer and a second contact opening are formed in the second insulating layer. A first measuring step is performed to measure a first thickness loss and a second thickness loss from the second etch stop layer exposed respectively by the monitoring opening and the second contact opening on the dummy wafer. And a correlation is established from the first and second thickness losses. A second measuring step is performed to measure a third thickness loss from the first etch stop layer exposed by the monitoring opening on the wafer. The result is then compared with the correlation to deduce a fourth thickness loss from the first contact opening on the wafer.
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申请公布号 |
US6479307(B2) |
申请公布日期 |
2002.11.12 |
申请号 |
US20010854007 |
申请日期 |
2001.05.10 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHUANG SHU-YA;SUN GOW-WEI;HONG GA-MING;CHEN STEVEN;WANG PEI-JEN |
分类号 |
H01L21/768;H01L23/544;(IPC1-7):H01L21/66;G01R31/26 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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