发明名称 Composite material for heat sinks for semiconductor devices and method for producing the same
摘要 A high-pressure vessel is allowed to be in an initial state, and a first chamber is disposed downward. Copper or copper alloy is placed in the first chamber, and SiC is set in a second chamber. The high-pressure vessel is tightly sealed, and then the inside of the high-pressure vessel is subjected to vacuum suction through a suction pipe. An electric power is applied to a heater to heat and melt the copper or copper alloy in the first chamber. At a stage at which the molten copper in the first chamber arrives at a predetermined temperature, the high-pressure vessel is inverted by 180 degrees to give a state in which SiC is immersed in the molten copper. An impregnating gas is introduced into the high-pressure vessel through a gas inlet pipe to apply a pressure to the inside of the high-pressure vessel. Thus, SiC is impregnated with the molten copper. The high-pressure vessel is inverted by 180 degrees, and then the impregnating gas in the high-pressure vessel is discharged through a gas outlet pipe, simultaneously with which a cooling gas is introduced into the high-pressure vessel through the gas inlet pipe to cool the high-pressure vessel.
申请公布号 US6479095(B1) 申请公布日期 2002.11.12
申请号 US20000614899 申请日期 2000.07.12
申请人 NGK INSULATORS, LTD. 发明人 ISHIKAWA SHUHEI;MITSUI TSUTOMU
分类号 C04B41/88;C04B41/51;C04B41/52;C22C1/10;C22C9/00;H01L21/48;H01L23/373;(IPC1-7):B05D3/02;B05D1/18;B05D1/36;B05D5/00 主分类号 C04B41/88
代理机构 代理人
主权项
地址