发明名称 |
DRAM cell capacitor and manufacturing method thereof |
摘要 |
A method for manufacturing a cell capacitor includes a step of forming an upper electrode and a trench for the lower electrode simultaneously in a single mask step. Further steps for manufacturing a cell capacitor includes forming a storage node contact by employing a predefined plate silicon layer and forming a capacitor dielectric using the storage contact node, as a result, it becomes possible to resolve "lift-off" problems, twin-bit failures, and misalignment.
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申请公布号 |
US6479343(B1) |
申请公布日期 |
2002.11.12 |
申请号 |
US20000510247 |
申请日期 |
2000.02.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG YOO-SANG;SONG SANG-HO;PARK BYUNG JUN;CHUNG TAE YOUNG |
分类号 |
H01L21/02;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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