发明名称 MOS current sense circuit
摘要 A new current sense circuit has been achieved. The current sense circuit comprises, first, a first MOS transistor having a gate, a drain, and a source. The gate is coupled to a control signal. The drain is coupled to a load such that a load current flows through the first MOS transistor when the control signal is ON. A second MOS transistor has a gate, a drain, and a source. The gate is coupled to the control signal. The drain is coupled to a constant current source such that the constant current flows through the second MOS transistor when the control signal is ON. The source is coupled to the source of the first MOS transistor. The first and second MOS transistors are operating in the linear region when the control signal is ON. Finally, a means to compare the first MOS transistor drain voltage and the second MOS transistor drain voltage is provided.
申请公布号 US6479975(B1) 申请公布日期 2002.11.12
申请号 US20010978232 申请日期 2001.10.16
申请人 DIALOG SEMICON 发明人 PLANKENSTEINER MANFRED;KNOEDGEN HORST
分类号 G01R19/165;G05F3/26;(IPC1-7):G05F3/16;G05F3/20 主分类号 G01R19/165
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