发明名称 |
Method of manufacturing a substrate with directionally anisotropic warping |
摘要 |
A semiconductor device substrate which can be easily conveyed and a semiconductor device fabrication method using the substrate. The semiconductor device fabrication method includes forming a solder resist on a semiconductor element mounting plate-shaped substrate having major and minor sides and containing organic matter, having a linear expansion coefficient A different from that of the substrate, warping the substrate along a minor-side direction, and conveying the warped substrate.
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申请公布号 |
US6479318(B2) |
申请公布日期 |
2002.11.12 |
申请号 |
US20010838388 |
申请日期 |
2001.04.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUO ITARU;RYU HIROSHI;MIYAMURA KAYO |
分类号 |
H01L21/677;B23K1/00;H01L21/50;H01L23/13;H01L23/14;H05K1/02;H05K3/28;(IPC1-7):H01L21/44;H01L21/30 |
主分类号 |
H01L21/677 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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