发明名称 Method of manufacturing a substrate with directionally anisotropic warping
摘要 A semiconductor device substrate which can be easily conveyed and a semiconductor device fabrication method using the substrate. The semiconductor device fabrication method includes forming a solder resist on a semiconductor element mounting plate-shaped substrate having major and minor sides and containing organic matter, having a linear expansion coefficient A different from that of the substrate, warping the substrate along a minor-side direction, and conveying the warped substrate.
申请公布号 US6479318(B2) 申请公布日期 2002.11.12
申请号 US20010838388 申请日期 2001.04.20
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MATSUO ITARU;RYU HIROSHI;MIYAMURA KAYO
分类号 H01L21/677;B23K1/00;H01L21/50;H01L23/13;H01L23/14;H05K1/02;H05K3/28;(IPC1-7):H01L21/44;H01L21/30 主分类号 H01L21/677
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