NICKEL SILICIDE INCLUDING IRIDIUM FOR USE IN ULTRA-SHALLOW JUNCTIONS WITH HIGH THERMAL STABILITY AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: Nickel silicide including iridium for use in ultra-shallow junctions and method of manufacturing the same are provided to achieve improved thermal stability of a nickel silicide film. CONSTITUTION: A method of fabricating a nickel silicide on a silicon substrate comprises providing a silicon substrate, depositing iridium on the silicon substrate, depositing nickel on the silicon substrate wherein the nickel is in contact with the iridium, and annealing the iridium and the nickel to form a nickel silicide on the silicon substrate.