发明名称 METHOD FOR LASER METALLIZATION OF INSULATING SUBSTRATE
摘要 FIELD: electrical engineering. SUBSTANCE: method for laser metallization of insulating substrate used for microelectronic devices including microwave hybrid integrated circuits is based on substrate surface treatment with laser beam. Novelty is that insulating materials used for the purpose are copper borates CuB2O4 and Cu3B2O6 in single- crystalline state and glass of CuO-B2O3 composition, and that insulating substrate is treated with laser radiation in atmosphere of hydrocarbon combustion products. Novelty is also that surface area on insulating substrate to be metallized is set to be of the same size as laser radiation spot and that copper layer thickness is controlled by varying power and time of exposure to laser beams. EFFECT: facilitated procedure, enhanced chemical purity of coating and its density and strength of adhesion to substrate. 2 cl, 1 dwg
申请公布号 RU2192715(C1) 申请公布日期 2002.11.10
申请号 RU20010119505 申请日期 2001.07.13
申请人 INSTITUT FIZIKI IM. L.V.KIRENSKOGO SO RAN 发明人 MASLENNIKOV O.A.;VOLKOV N.V.;SABLINA K.A.;PETRAKOVSKIJ G.A.
分类号 H05K3/02 主分类号 H05K3/02
代理机构 代理人
主权项
地址