| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent sticking such as adhering of a structure to a lower substrate in a process of etching a sacrifice layer at the lower of the structure and drying the same. SOLUTION: A high concentration impurity region is formed all over or partially in the Si 101 surface of a third layer, an oxide film SiO2 102 of a second layer is formed on the whole surface of the third layer, which is joined to Si substrate of a first layer, and Si of the third layer is mirror-polished to obtain an SOI wafer. Subsequently, the resist 104 is patterned to form a groove and a penetrating hole determining the outline of a structure in Si of the third layer, and a projecting and recessed part 112 about 0.01 to 0.5μm is formed on the surface where a high concentration impurity region of the third layer is formed simultaneously with removing the oxide film SiO2 of the second layer opposite to the formed detected structure 103. A contact area between the third layer and the first layer is decreased by the projecting and recessed part, so that suction force in the first layer direction of the third layer generated by the surface tension 300 of a liquid is reduced so as to surely prevent sticking.</p> |
